Photoluminescence in heavily doped Si: B and Si: As
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. Heavily doped semiconductors and devices
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1. Systematic variation of photoluminescence spectra with donor and acceptor concentrations ranging from 1 × 1010 to 1 × 1020 cm−3 in Si;Japanese Journal of Applied Physics;2022-07-19
2. On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation;Journal of Luminescence;2017-01
3. Evaluating Depth Distributions of Dislocations in Silicon Wafers Using Micro-Photoluminescence Excitation Spectroscopy;Energy Procedia;2016-08
4. Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers;IEEE Journal of Photovoltaics;2016-05
5. Features of the electroluminescence spectra of quantum-confined silicon p +-n heterojunctions in the infrared spectral region;Semiconductors;2013-11
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