Tight-binding model for Zn3P2 valence bands
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference22 articles.
1. Electronic Structure and the Properties of Solids;Harrison,1980
2. A Semi-empirical tight-binding theory of the electronic structure of semiconductors†
3. Tight-binding calculations for the electronic structure of isolated vacancies and impurities in III-V compound semiconductors
4. Universal tight-binding model for II–V semiconducting compounds
5. Tight-Binding Model for Zn3As2 Valence Bands
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Energy Band Structure of Zn3P2-Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations;physica status solidi (b);2001-10
2. Tight-binding modelling of materials;Reports on Progress in Physics;1997-12-01
3. X-Ray Emission Spectra and Electronic Structures of Red Phosphorus, 3dTransition-Metal Phosphides and III–V Compounds;Journal of the Physical Society of Japan;1995-07-15
4. Electronic energy levels of an ideal vacancy in II3–V2 compounds;Solid State Communications;1995-02
5. LαX-Ray Emission Spectra and Electronic Structures of Zinc and Its Compounds;Journal of the Physical Society of Japan;1994-10-15
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