On the intensity dependence of the photoconductivity in a-SI:H-Reference-Cited by-同舟云学术

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On the intensity dependence of the photoconductivity in a-SI:H

Published:1983-07 Issue:2 Volume:47 Page:107-110
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Evangelisti F.,Fiorini P.,Fortunato G.,Giovannella C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous silicon

2. Concepts in Photoconductivity and Allied Problems;Rose,1963

3. F. Evangelisti, P. Fiorini, G. Fortunato, A. Frova, G. Giovannella, and A. Peruzzi, J. Non-Cryst. Solids (to be published).

4. Exponential absorption edge in hydrogenated α-Si films

5. Proc. 9th Int. Conf, on Amorphous and Liquid Semiconductors;Yamasaki,1981

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoinduced absorption in B-doped hydrogenated amorphous silicon alloys applied to all-optical modulators;Journal of Applied Physics;2008-01-15

2. Fermi-level-dependent mobility-lifetime product ina-Si: H;Physical Review B;1989-05-15

3. On the relationship between photoconductivity and light intensity in solids;Journal of Physics D: Applied Physics;1988-12-14

4. High rate primary ion beam deposition of a-Si:H films;Applied Physics A Solids and Surfaces;1988-10

5. Properties of amorphous Si: H films prepared by dual ion beam sputtering;Physica Scripta;1988-05-01

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