Two-hole transition in the luminescence of excitons bound to neutral acceptors in GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon
2. Two-Electron Transitions in the Luminescence of Excitons Bound to Neutral Donors in Gallium Phosphide
3. Photoluminescence of Ag-doped p-type GaAs
4. Exciton Recombination Radiation of GaAs: Zn
5. Photoluminescence and Photoconductivity in Undoped Epitaxial GaAs
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1. Lattice parameter variation in doped GaAs substrates determined using high resolution photoluminescence spectroscopy;Journal of Applied Physics;1998-12
2. Selective excitation luminescence in bulk‐grown GaAs;Applied Physics Letters;1982-01-15
3. Auger and radiative transition rates for acceptor bound excitons in direct-gap semiconductors;Physical Review B;1979-08-15
4. Excited states of excitons bound to nitrogen pairs in GaP;Physical Review B;1977-01-15
5. Binding energy of shallow acceptors in group IV elements and III–V compounds;Journal of Luminescence;1976-03
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