Photoluminescence of GaSe(Cu) doped by ion implantation-Reference-Cited by-同舟云学术

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Photoluminescence of GaSe(Cu) doped by ion implantation

Published:1981-04 Issue:4 Volume:38 Page:341-343
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Capozzi V.,Minafra A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference7 articles.

1. Direct and indirect excitonic emission in GaSe

2. V. Capozzi & A. Minafra (to be published).

3. Ion implantation in Semi-conductors;Kachiurin,1976

4. Ion Implantation — problems and perspectives

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal;Crystal Research and Technology;2003-11

2. Electrical properties of nitrogen implanted GaSe single crystal;Crystal Research and Technology;2003-09

3. Excitonic photoluminescence spectra of C60single crystals grown by different techniques;The European Physical Journal Applied Physics;2001-04

4. Kinetics of radiative recombinations in GaSe and influence of Cu doping on the luminescence spectra;Physical Review B;1983-10-15

5. Photoluminescence properties of Cu-doped GaSe;Journal of Physics C: Solid State Physics;1981-10-20

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