Fine structure of neutral-acceptor bound excitons in direct gap semiconductors with zinc blende structure-Reference-Cited by-同舟云学术

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Fine structure of neutral-acceptor bound excitons in direct gap semiconductors with zinc blende structure

Published:1981-11 Issue:6 Volume:40 Page:663-667
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Stébé B.,Munschy G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference36 articles.

1. Accurate binding energies of neutral bound excitons

2. Proc. 15th Int. Conf. Phys. Semicond.;Bajaj,1980

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