Electrothermal model of switching in amorphous boron and silicon thin films-Reference-Cited by-同舟云学术

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Electrothermal model of switching in amorphous boron and silicon thin films

Published:1974-08 Issue:3 Volume:15 Page:551-554
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Feldman Charles,K. Charles Harry

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference22 articles.

1. Proc. 4th Int. Conf. on Amorphous and Liquid Semiconductors,1971-1972

2. Proc. of 5th Int. Conf. on Amorphous and Liquid Semiconductors,1973

3. Switching and Negative Resistance in Amorphous Boron Layers

4. Non-polarized memory-switching characteristics of ZnTe thin films

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DC conductivity and threshold switching in iodine doped Ge-Se-Te glasses;Ceramics International;2021-12

2. Thermal switching effect in β-rhombohedral boron;Journal of Physics: Conference Series;2009-06-01

3. Switching in amorphous-silicon devices;Physical Review B;1994-05-15

4. Switching in amorphous devices;International Journal of Electronics;1992-11

5. Chapter 15 Electronic Switching in Amorphous Silicon Junction Devices;Hydrogenated Amorphous Silicon - Part D: Device Applications;1984

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