Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
2. Shubnikov de Haas oscillations in n-type inversion layers on (110) and (111) surfaces of Si
3. Surface quantum oscillations in (110) and (111) n-type silicon inversion layers
4. Structures of Clean Surfaces of Germanium and Silicon. I
5. Measurement of Strains at Si‐SiO2 Interface
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1. High carrier mobility in Si-MOSFETs with a hexagonal boron nitride buffer layer;Solid State Communications;2015-05
2. Valley-dependent two-dimensional transport in (100), (110), and (111) Si inversion layers at low temperatures and carrier densities;Physical Review B;2013-02-07
3. Enhancement of valley splitting in (100) Si MOSFETs at high magnetic fields;Solid State Communications;2010-02
4. Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon;Physical Review B;2009-05-14
5. Valley degeneracies in (111) silicon quantum wells;Applied Physics Letters;2009-01-26
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