Fundamental optical constant of the layered semiconductor ZnIn2S4
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. Valence band photoemission spectroscopy of a ternary layered semiconductor: ZnIn2S4
2. Electron band structure of α-ZnIn2S4 and related polytypes
3. Transport properties of semiconducting ZnIn2S4
4. Electric field variation of photoconductivity quenching due to hot electron capture in ZnIn2S4
5. Luminescence of ZnIn2S4 and ZnIn2S4:Cu Single Crystals
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1. Optical properties and birefringence of ZnIn2S4 layered crystals;Journal of Physics and Chemistry of Solids;2020-01
2. Photovoltaic Properties of Solid State Junctions of Layered Semiconductors;Physics and Chemistry of Materials with Low-Dimensional Structures;1992
3. Photoluminescence of MgIn2S4 and HgIn2S4;Solid State Communications;1991-01
4. Structural and electronic properties of the layer semiconductor Znln2S4;Journal de Chimie Physique;1989
5. Determination of the optical constantsn,k of Zn3In2S6 and Zn5In2S8 from transmission measurements;Physica Status Solidi (a);1988-06-16
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