Midwave (3–4 μm) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors-Reference-Cited by-同舟云学术

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Midwave (3–4 μm) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors

Published:1996-02 Issue:1 Volume:37 Page:83-86
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Aidaraliev M.,Zotova N.V.,Karandashov S.A.,Matveev B.A.,Stus' N.M.,Talalakin G.N.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Methane and carbon dioxide sensing using a DFB laser diode operating at 1.64 μm

2. High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm

3. Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys

4. Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers

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1. Research of neural network application in methane gas spectrum sensing system;SPIE Proceedings;2010-05-13

2. Analytical detection methodologies for methane and related hydrocarbons;Talanta;2006-04-15

3. Demonstration of methane spectroscopy using a vertical-cavity surface-emitting laser at 1.68 µm with up to 5 MHz repetition rate;Measurement Science and Technology;2002-12-11

4. Semiconductor light sources for mid–infrared applications: concluding remarks;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;2001-03-15

5. Antimony-based infrared materials and devices;Thin Films;2001

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