Effects of Radiation Damage on Scientific Charge Coupled Devices-Reference-Cited by-同舟云学术

Effects of Radiation Damage on Scientific Charge Coupled Devices

Published:1999 Issue: Volume: Page:1-96
ISSN:1076-5670
Container-title:Advances in Imaging and Electron Physics
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Author:

Hardy T.D.,Deen M.J.,Murowinski R.

Publisher

Elsevier

Reference88 articles.

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4. A three level metallisation three-phase CCD;Bertram;IEEE Trans. Electron Devices,1974

5. Blouke, M, J. Janesick J. Hall M. Cowens (1981b). Texas Instruments (TI) 800x800 charge-coupled device (CCD) image sensor, in Solid State Imagers for Astronomy (J. Geary D. Lathan) Proc. SPIE 290, pp. 6–15.

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