The influence of carbon atom distribution in precursors with 1:1 carbon to silicon atoms ratio on structure and thermal evolution of obtained silicon oxycarbide based materials-Reference-Cited by-同舟云学术

The influence of carbon atom distribution in precursors with 1:1 carbon to silicon atoms ratio on structure and thermal evolution of obtained silicon oxycarbide based materials

Published:2021-12 Issue:23 Volume:47 Page:33070-33077
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Niemiec Wiktor,Szczygieł Przemysław,Olejniczak Zbigniew^ORCID,Handke Mirosław

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Influence of processing conditions in TEOS/PDMS derived silicon oxycarbide materials. Part 1: microstructure and properties;Mazo;J. Eur. Ceram. Soc.,2013

2. Silicon oxycarbide (SiOC) ceramic microspheres – structure and mechanical properties by nanoindentation studies;Szymanski;Ceram. Int.,2019

3. Evaluation of oxidation resistance of thin continuous silicon oxycarbide fiber derived from silicone resin with low carbon content;Narisawa;J. Mater. Sci.,2010

4. High acid resistant SiOC ceramic membranes for wastewater treatment;Guo;Ceram. Int.,2018

5. A model for the nanodomains in polymer-derived SiCO;Saha;J. Am. Ceram. Soc.,2006

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1. Adhesion Strength of Al, Cr, In, Mo, and W Metal Coatings Deposited on a Silicon–Carbon Film;Coatings;2023-08-02

2. New insight into SiOC atomic structure evolution during early stage of pyrolysis;Journal of the American Ceramic Society;2023-01-10