Author:
Liu Xiaofei,Zhang Litong,Liu Yongsheng,Ye Fang,Yin Xiaowei
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Large-band-gap SiC, III–V nitride, and II–VI ZnSe-based semiconductor device technologies;Morkoc;Journal of Applied Physics,1994
2. Recent developments in SiC single-crystal electronics;Ivanov;Semiconductor Science and Technology,1992
3. Characteristics of Si–C–N films deposited by microwave plasma CVD on Si wafers with various buffer layer materials;Chang;Diamond and Related Materials,2001
4. Deposition and optical studies of silicon carbide nitride thin films;Sundaram;Thin Solid Films,2000
5. P. Bohacek, J. Huran, A.P. Kobzev, N.I. Balalykin, J. Pezoltd, PECVD Silicon Carbon Nitride Thin Films: Properties, in: Proceedings of the Seventh International Conference on Advanced Semiconductor Devices and Microsystems, 2008, pp. 191–194.
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