Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices;Jenny;Mater. Sci. Forum,2004
2. Wire sawing technology: a state-of-the-art review;Wu;Precis. Eng.,2016
3. Wire-sawing processes: parametrical study and modeling;Bidiville;Sol. Energy Mater. Sol. Cell.,2015
4. 4H-SiC wafer slicing by using femtosecond laser double-pulses;Kim;Opt. Mater. Express,2017
5. Study on the subsurface microcrack damage depth in electroplated diamond wire saw slicing SiC crystal;Gao;Ceram. Int.,2018
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modulation of ultrafast laser-induced modified structure inside silicon carbide for thin wafer dicing;Materials Science in Semiconductor Processing;2024-11
2. A review of ultra-short pulse laser micromachining of wide bandgap semiconductor materials: SiC and GaN;Materials Science in Semiconductor Processing;2024-09
3. HYPREZ Wafering Solutions: A Novel Approach of SiC Wafering Solution;Materials Science Forum;2024-08-21
4. Surface micromorphology and nanostructures evolution in hybrid laser processes of slicing and polishing single crystal 4H-SiC;Journal of Materials Science & Technology;2024-06
5. The influence of cracks in the coupling region of micro-grinding and laser stealth combined dicing on the quality of cutting side walls;Journal of Manufacturing Processes;2024-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3