Fabrication, properties, and photodetector of β-(AlxGa1-x)2O3/GaN heteroepitaxial films grown by MOCVD-Reference-Cited by-同舟云学术

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Fabrication, properties, and photodetector of β-(AlxGa1-x)2O3/GaN heteroepitaxial films grown by MOCVD

Published:2023-12 Issue: Volume: Page:
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Chen Rongrong,Zhu Hongyan,Han Xinyu,Luan Caina,Wang Di^ORCID,Ma Jin^ORCID,Xiao Hongdi^ORCID

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process;Hu;Opt Express,2015

2. Phase transformation in MOCVD growth of (AlxGa1-x)(2)O-3 thin films;Bhuiyan;Apl. Mater.,2020

3. Preparation and properties of heteroepitaxial beta-Ga2O3 films on KTaO3 (100) substrates by MOCVD;Wang;Mater. Char.,2020

4. Characterization of single crystal beta-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD;Wang;Ceram. Int.,2020

5. Ambipolarity regulation of deep-UV photocurrent by controlling crystalline phases in Ga2O3 nanostructure for switchable logic applications;Cheng;Advanced Electronic Materials,2023

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