Electrical properties of lanthanum doped Bi4Ti3O12 thin films annealed in different atmospheres-Reference-Cited by-同舟云学术

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Electrical properties of lanthanum doped Bi4Ti3O12 thin films annealed in different atmospheres

Published:2007-12 Issue:8 Volume:33 Page:1535-1541
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Simões A.Z.,Ries A.,Stojanovic B.D.,Biasotto G.,Longo E.,Varela J.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Phase evolution and annealing effects on the electrical properties of Pb(Zr0.53Ti0.47)O3 thin-films with RuO2 electrodes;Al-Shareef;Appl. Phys. Lett.,1995

2. Ferroelectric memories;Scott;Science,1989

3. Lanthanum-substituted bismuth titanate for use in non-volatile memories;Park;Nature,1999

4. Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12;Park;Appl. Phys. Lett.,1999

5. Fatigue-free ferroelectric capacitors with platinum electrodes;Paz de Araujo;Nature,1995

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