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Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel

  • Published:2019-04 Issue:4 Volume:5 Page:e01452
  • ISSN:2405-8440
  • Container-title:Heliyon
  • language:en
  • Short-container-title:Heliyon

Author:

Dargar Shashi K.ORCID,Srivastava Viranjay M.

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference35 articles.

1. Review of flexible and transparent thin-film transistors based on zinc oxide and related materials;Zhang;Chin. Phys. B,2017

2. Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications;Ajayan;AEU Int. J. Electron Commun.,2017

3. Performance estimation of Amorphous-IGZO based thin film transistor;Dargar,2018

4. Performance comparison of Amorphous-IGZO and hydrogenated silicon based thin film transistor;Dargar,2018

5. Performance evaluation of GaN based thin film transistor using TCAD simulation;Dargar;Int. J. Electr. Comput. Eng.,2017

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