Application of an optimized alkaline cleaning solution for inhibitor removal during the post-CMP process: Performance evaluation and mechanism analysis-Reference-Cited by-同舟云学术

Application of an optimized alkaline cleaning solution for inhibitor removal during the post-CMP process: Performance evaluation and mechanism analysis

Published:2023-01 Issue: Volume:369 Page:120892
ISSN:0167-7322
Container-title:Journal of Molecular Liquids
language:en
Short-container-title:Journal of Molecular Liquids

Author:

Li Wei,Tan Baimei,Zhang Shihao,Gao Baohong,Ma Boao,Guo Lei,Du Haoyu,Wang Fangyuan,Wang Xiaolong

Funder

Natural Science Foundation of Hebei Province

Guizhou Science and Technology Department

Publisher

Elsevier BV

Subject

Materials Chemistry,Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference48 articles.

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3. Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2;Wang;J. Mater. Process. Technol.,2021

4. Surface corrosion inhibition mechanism of sarcosine as a green novel inhibitor on a novel barrier layer material of cobalt in copper film CMP for GLSI;Zhang;Sci. Semicond. Process.,2022

5. Experimental validation and molecular dynamics simulation of removal of PO residue on Co surface by alkaline cleaning solution with different functional groups;Sun;Colloids Surf. A,2021

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2. Cleaning mechanisms during post chemical mechanical polishing (CMP) using particle removal of surfactants via a citric acid-based solution;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2024-09

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