High temperature semiconductor sensor for the detection of fluorine

Author:

Vasiliev Alexei,Moritz Werner,Fillipov Vladimir,Bartholomäus Lars,Terentjev Alexander,Gabusjan Tigran

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. T. Ichichi, S. Uchikoshi, M. Ishizuka (Riken Keiki Co.), Potentiostatic electrolytic acid gas sensor, Japanese Patent 07 55,768, 3 March 1995.

2. Potentiometric sensor for the determination of fluorine in gases;Murin;Zh. Prikl. Khim.,1991

3. A.A. Vasiliev, A.V. Pisliakov, D.B. Samusik, Screen-printing technology of metal oxide and electrochemical gas sensors, in: Abstracts, VI European Conference `Eurosensors—6', Budapest, 1993, p. 346.

4. Monitoring of HF and F2 using a field effect sensor;Moritz;Sensors and Actuators B,1995

5. W. Moritz, L. Bartholomäus, T. Gabusjan, M. Reichling, J. Hartmann, A.A. Vasiliev, D.Yu. Godovski, V. Chaplanov, V.V. Malyshev, Improvement of the active layers of a field effect sensor for fluorine, presented at The Sixth International Meeting on Chemical Sensors, Gaithersburg, USA, 22–25 July 1996.

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