Absolute cross sections for the dissociative electron impact ionization of the CFx (x = 1−3) free radicals
Author:
Publisher
Elsevier BV
Subject
Spectroscopy
Reference27 articles.
1. Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas
2. Decomposition and product formation in CF4‐O2plasma etching silicon in the afterglow
3. A model of the chemical processes occurring in CF4/O2 discharges used in plasma etching
4. Study of Surface Reaction Probability of CFxRadicals by Trench Deposition Method
5. Further studies of the continuous UV emission produced by electron impact on CF4
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