Essential difference in concentration profile of Au in Si after annealing above or below 850°C
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Three States of Substitutional Gold in Silicon
2. Mechanism and kinetics of the diffusion of gold in silicon
3. Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
4. Annealing of Low-Temperature Substitutional Gold in Silicon: Ring-Diffusion of Substitutional Gold in Silicon
5. Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Generation, growth, shrinkage, and dispersion of Au agglomerates in Si during the annealing of supersaturated substitutional Au;Journal of Materials Science: Materials in Electronics;2014-03-02
2. Conditions for the generation of nano-sized Au agglomerates in Si;Journal of Materials Science: Materials in Electronics;2013-06-07
3. Distribution of Au atom number in the Au agglomerates generated during the out-diffusion process of supersaturated high-temperature substitutional Au in Si at 900 °C;Journal of Materials Science: Materials in Electronics;2010-07-02
4. Au agglomerates observed in the out-diffusion process of supersaturated high-temperature substitutional Au in Si;Journal of Materials Science: Materials in Electronics;2007-06-15
5. Indiffusion and Out-Diffusion Profiles of Substitutional Au in Si Affected by Self-Interstitials and Vacancies;Japanese Journal of Applied Physics;2003-06-15
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