Dielectric susceptibility behaviour in the incommensurate phase of TlInS2-Reference-Cited by-同舟云学术

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Dielectric susceptibility behaviour in the incommensurate phase of TlInS2

Published:2003-06 Issue:1-2 Volume:334 Page:13-20
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Mikailov F.A.,Başaran E.,Mammadov T.G.,Seyidov M.Yu.,Şentürk E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. High-pressure Raman study of the ternary chalcogenides TlGaS2, TlGaSe2, TlInS2, and TlInSe2

2. Dielectric properties and metastable states in ferroelectric TlInS2crystals

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetoelectricity in Ion-Implanted Ferroelectric Crystals;Advances in Optoelectronic Materials;2021

2. Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions;Semiconductors;2020-06

3. Phase (x, T) and (p, T) diagrams of TlIn(S1−xSex)2 polycrystal in the compositional range 0 ≤ x ≤ 0.15;Phase Transitions;2019-03-28

4. Identification of Mn dopant in the structure of TlInS2 layered semiconductor;Materials Research Express;2019-02-22

5. Polarization switching in undoped and La-doped TlInS2 ferroelectric-semiconductors;Physica B: Condensed Matter;2017-12

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