Influence of vacuum rapid thermal annealing on the properties of μPCVD SiO2 and SiO2·P2O5 films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
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1. Electron trapping in thin gate insulators prepared using a two‐step silicon oxidation procedure
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1. Effects of annealing temperature on ultra-low dielectric constant SiO2 thin films derived from sol–gel spin-on-coating;Physica B: Condensed Matter;2008-03
2. Growth of Silicon Carbide Nanoparticles Using Tetraethylorthosilicate for Microelectromechanical Systems;Electrochemical and Solid-State Letters;2007
3. Nanocrystal formation in annealed a-SiO0.17N0.07:H films;Nanotechnology;2004-11-19
4. Nanocrystal formation in thermally oxidized and annealed a-Si:H films and SiO x N y films (x=0.17; y=0.07);Nanomaterials and Their Optical Applications;2003-11-25
5. Phosphorous implantation in silicon through thin SiO2 layers: Oxide damage and postoxidation thermal treatments;Journal of Applied Physics;2001-11-15
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