Basics of metal–oxide–semiconductor field-effect transistor (MOSFET)-Reference-Cited by-同舟云学术

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Basics of metal–oxide–semiconductor field-effect transistor (MOSFET)

Published:2018 Issue: Volume: Page:1-17
ISSN:
Container-title:CMOS Past, Present and Future
language:
Short-container-title:

Author:

Radamson H.H.

Publisher

Elsevier

Reference17 articles.

1. Intel enters the third dimension;Cartwright;Nature,2001

2. FinFET—a self-aligned double-gate MOSFET scalable to 20 nm;Hisamoto;IEEE Trans. Electron Devices,2000

3. The challenges of advanced CMOS process from 2D to 3D;Radamson;Appl. Sci.,2017

4. Microelectronic Devices;Yang,1988

5. Moore's Law: the future of Si microelectronics;Thompson;Mater. Today,2006

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