Dislocation behavior in heavily impurity doped Si
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering
Reference16 articles.
1. In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals
2. Influence of oxygen precipitation along dislocations on the strength of silicon crystals
3. Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration
4. Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed
5. Activities of dislocations in heavily impurity-doped Si
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