Gate-voltage limitations for thin channel MIS and schottky buried-channel charge-coupled devices-Reference-Cited by-同舟云学术

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Gate-voltage limitations for thin channel MIS and schottky buried-channel charge-coupled devices

Published:1981-07 Issue:4 Volume:12 Page:5-10
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Swart P.L.,Campbell C.K.

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

1. First experimental bipolar charge-coupled device;Kleefstra;Microelectronics,1975

2. New structures for charge-coupled devices;Schuermeyer,1972

3. High purity epitaxial GaAs;Aoki;Jap, J. Appl. Phys.,1975

4. The buried channel charge coupled device;Walden;BSTJ,1972

5. Charge distribution in buried-channel charge-coupled devices;Kent;BSTJ,1973

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