Measurements of charge collection profiles in virgin and strongly irradiated silicon diodes by means of the micro-IBICC technique
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
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1. Ion beam induced charge analysis of radiation damage in silicon photodiodes;SPIE Proceedings;2013-05-29
2. Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy;ISRN Materials Science;2013-01-17
3. Measurement of charge collection efficiency profiles of CMOS active pixel sensors;Journal of Instrumentation;2012-09-21
4. Measurement of charge collection profiles in irradiated silicon diodes by lateral IBIC technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-07
5. Radiation damage microstructures in silicon and application in position sensitive charged particle detection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04
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