Measurements of charge collection profiles in virgin and strongly irradiated silicon diodes by means of the micro-IBICC technique

Author:

Vittone E,Manfredotti C,Fizzotti F,Lo Giudice A,Lorenzi A,Galassini S,Jaksic M

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ion beam induced charge analysis of radiation damage in silicon photodiodes;SPIE Proceedings;2013-05-29

2. Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy;ISRN Materials Science;2013-01-17

3. Measurement of charge collection efficiency profiles of CMOS active pixel sensors;Journal of Instrumentation;2012-09-21

4. Measurement of charge collection profiles in irradiated silicon diodes by lateral IBIC technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-07

5. Radiation damage microstructures in silicon and application in position sensitive charged particle detection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04

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