Pulse response of GaAs and InP photoconductive detectors for the X-ray diagnostics of laser plasmas

Author:

Riesz Ferenc,Ryć Leszek,Badziak Jan,Pfeifer Miroslav

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Bulk GaAs Photoconductive Detectors Operated in Current Mode;McGregor,1995

2. Radiation-induced conductivity: High-speed detection of X rays and neutrons

3. A.R. Forouhi, I. Bloomer, Properties of Indium Phosphide, Inspec, London, 1991, p. 130;

4. D.E. Aspnes, Properties of Gallium Arsenide, Inspec, London, 1991 (Chapter 8);

5. X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92

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1. Ion and X-ray techniques used for study of laser-produced plasmas;Radiation Effects and Defects in Solids;2015-04-03

2. Optical properties of indium phosphide in the 50–200Å wavelength region using a reflectivity technique;Applied Optics;2010-09-24

3. Application of MSM InP detectors to the measurement of pulsed X-ray radiation;Radiation Effects and Defects in Solids;2008-06

4. Role of electrode metallization in the performance of bulk semi-insulating InP radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2007-06

5. Performance study of bulk semi-insulating InP radiation detectors with different electrode metallizations;2006 International Conference on Advanced Semiconductor Devices and Microsystems;2006-10

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