Carrier lifetime under low and high electric field conditions in semi-insulating GaAs

Author:

Rogalla M,Geppert R,Göppert R,Hornung M,Ludwig J,Schmid Th,Irsigler R,Runge K,Söldner-Rembold A

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Investigation of Terahertz Peak Frequencies From GaAs Photoconductive Antennas;IEEE Journal of Selected Topics in Quantum Electronics;2017-07

2. Electric control of the spin Hall effect by intervalley transitions;Nature Materials;2014-08-10

3. Development and characterization of a 3D GaAs X-ray detector for medical imaging;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2013-11

4. Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes;Solid-State Electronics;2013-02

5. Technology and Performance Study of a Two-Line Monolithic X- and $\gamma$-Ray Detection Chip Based on Semi-Insulating GaAs;IEEE Transactions on Nuclear Science;2011-12

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