Investigation of damage-induced defects in silicon by TCT-Reference-Cited by-同舟云学术

Investigation of damage-induced defects in silicon by TCT

Published:1997-04 Issue:3 Volume:388 Page:356-360
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Fretwurst E,Eremin V,Feick H,Gerhardt J,Li Z,Lindström G

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. Trapping induced-Neff and electrical field transformation at different temperatures in neutron irradiated high resistivity detectors;Eremin;Report BNL-60154,1994

2. Determination of the Fermi level position for neutron irradiated high resistivity silicon detectors and materials using the transient charge technique (TChT)

3. Fluences and spectra of accelerator generated fast neutrons

4. these Proceedings (Int. Conf. on Radiation Effects on Semiconductor Materias, Detectors and Devices);Moll,1997

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