Study of deep level defect behaviour in rapid thermal annealed Fe-doped semi-insulating InP
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Deep‐level spectroscopy in high‐resistivity materials
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3. Carrier compensation induced by rapid thermal annealing in undoped InP
4. Proc. 3rd Conf on InP and Related Materials;Hirt,1991
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of deep level defect behavior in undoped n-InP (100) after rapid thermal annealing;Microelectronic Engineering;2011-04
2. Investigation on deep level defects in rapid thermal annealed undoped n-type InP;Journal of Materials Science: Materials in Electronics;2009-05-07
3. Contact-free defect investigation of wafer-annealed Fe-doped SI-InP;Materials Science in Semiconductor Processing;2006-02
4. Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation;Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII;2004-06-16
5. Electrical isolation of InP and InGaAs using iron and krypton;Electronics Letters;2004
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