Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers-Reference-Cited by-同舟云学术

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Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

Published:1996-01 Issue:1-3 Volume:36 Page:50-54
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Gräf D.,Lambert U.,Brohl M.,Ehlert A.,Wahlich R.,Wagner P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon

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1. (Invited) Oxygen in Silicon: End of the Story?;ECS Transactions;2018-07-23

2. Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC;Journal of Applied Physics;2016-01-14

3. Impurity Engineering of Czochralski Silicon;Solid State Phenomena;2009-10

4. UV-Raman Spectroscopy Study on SiO2/Si Interface;ECS Transactions;2009-05-15

5. Microscale investigation of surface contaminations during silicon epitaxial growth;Microchimica Acta;2008-07-08

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