New dry-etch chemistries for III–V semiconductors-Reference-Cited by-同舟云学术

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New dry-etch chemistries for III–V semiconductors

Published:1994-07 Issue:2-3 Volume:25 Page:179-185
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Pearton S.J.,Chakrabarti U.K.,Ren F.,Abernathy C.R.,Katz A.,Hobson W.S.,Constantine C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Self‐aligned technology for tungsten‐contacted InP‐based etched mesa laser devices

2. Ion Beam Etching of InP. II. Reactive Etching with Halogen-Based Source Gases

3. Deformation‐free overgrowth of reactive ion beam etched submicron structures in InP by liquid phase epitaxy

4. InP and Related Materials;Hayes,1991

5. Long Wavelength Semiconductor Lasers;Agrawal,1986

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetics of neutral particles in HCl and HBr plasmas at low pressures and high electron concentrations;Russian Microelectronics;2016-07

2. Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries;Applied Surface Science;2007-02

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