Raman study of mechanical stresses in processes of oxygen precipitation in silicon
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Advances in the Understanding of Oxygen and Carbon in Silicon
2. The influence of thermal point defects on the precipitation of oxygen in dislocation‐free silicon crystals
3. Heat‐Treatment Studies of Oxygen‐Defect‐Impurity Interactions in Silicon
4. Oxygen precipitation in heavily boron‐doped silicon crystals
5. Growth law for disk precipitates, and oxygen precipitation in silicon
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