The electronic effect of Ti4+, Zr4+ and Ge4+ dopings upon the physical properties of In2O3 and Sn-doped In2O3 ceramics: application to new highly-transparent conductive electrodes-Reference-Cited by-同舟云学术

The electronic effect of Ti4+, Zr4+ and Ge4+ dopings upon the physical properties of In2O3 and Sn-doped In2O3 ceramics: application to new highly-transparent conductive electrodes

Published:1993-06 Issue:3 Volume:19 Page:285-289
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Campet G.,Han S.D.,Wen S.J.,Manaud J.P.,Portier J.,Xu Y.,Salardenne J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Transparent conductors—A status review

2. Fluorine-doped SnO2 films for solar cell application

3. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows

4. Optical properties of sputter‐deposited ZnO:Al thin films

5. Optical properties of SnOxthin films: Theory and experiment

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