Czochralski growth of Te-doped GaSb single crystals
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment
2. Crystal Growth: An Introduction;Hurle,1973
3. Observation of Growth Striations in Undoped GaSb Single Crystals
4. Growth properties of GaSb: The structure of the residual acceptor centres
5. The Czochralski growth of gallium antimonide single crystals under reducing conditions
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1. Rapid development of high-volume manufacturing methods for epi-ready GaSb wafers up to 6” diameter for IR imaging applications;Infrared Technology and Applications XLII;2016-05-20
2. Decrease in free carrier concentration in GaSb crystals using an ionized hydrogen atmosphere;Materials Chemistry and Physics;1996-07
3. Properties of Doped GaSb Single Crystals Grown by the Czochralski Method;Crystal Research and Technology;1996
4. Hydrogen passivation of residual acceptors in GaSb single crystals;Journal of Crystal Growth;1994-07
5. Manganese-doped GaSb single crystals grown by the Czochralski method;Semiconductor Science and Technology;1994-05-02
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