Optical investigations of surface and interface properties at III–V semiconductors
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatments
2. Comparison of surface properties of sodium sulfide and ammonium sulfide passivation of GaAs
3. Nearly ideal electronic properties of sulfide coated GaAs surfaces
4. Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions
5. Reflection high‐energy electron diffraction and x‐ray photoelectron spectroscopic study on (NH4)2Sx‐treated GaAs (100) surfaces
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1. Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface;Applied Surface Science;2020-12
2. Resonance Raman and Excitation Energy Dependent Charge Transfer Mechanism in Halide-Substituted Hybrid Perovskite Solar Cells;ACS Nano;2015-02-10
3. Combined photoreflectance/photoluminescence studies of the stability of semiconductor surface passivation;Technical Physics;2002-02
4. Combined photoreflectance/photoluminescence studies of the electronic properties of semiconductor surfaces;Physics of the Solid State;2000-12
5. Photoreflectance characterisation of Ar + ion etched and SiCI4reactive ion etched silicon (100);Materials Science and Technology;1997-11
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