Mechanism of formation of 60° and 90° misfit dislocations in semiconductor heterostructures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substrates
2. Defects and interfaces in heterostructures
3. Dislocation in Solids;Matthews,1979
4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
5. Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]
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