The fate of implanted 19F ions in diamond and their theoretical modelling-Reference-Cited by-同舟云学术

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The fate of implanted 19F ions in diamond and their theoretical modelling

Published:1992-01 Issue:1-4 Volume:11 Page:227-234
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Sellschop J.P.F.,Connell S.H.,Bharuth-Ram K.,Appel H.,Sideras-Haddad E.,Stemmet M.C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Residence sites for19F ions implanted into diamond

2. TDPAD studies on19F implanted into diamond

3. Temperature Dependence study of19F implants in diamond by TDPAD

4. Calculated perturbed angular correlations for111In doped cubic single crystals

5. A simple explanation of unexpected efg's in19F-TDPAD measurements

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hyperfine interaction studies in diamond;Physica B: Condensed Matter;2007-02

2. Implantation sites of Ce and Gd in diamond;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

3. Implantation sites of In, Cd, and Hf ions in diamond;Physical Review B;2001-10-22

4. Site occupancy and molecular complex formation of F-19 ions in fullerenes C-60 and C-70 studied by TDPAD;Hyperfine Interactions;1999

5. Locations of implanted F-19* atoms in Si, Ge and diamond studied through their nuclear quadrupole interactions;Hyperfine Interactions;1999

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