Materials modification: doping of diamond by ion implantation-Reference-Cited by-同舟云学术

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Materials modification: doping of diamond by ion implantation

Published:1992-01 Issue:1-4 Volume:11 Page:219-226
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Prins Johan F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Proc. Int. Conf. on Ion Beam Modification of Materials,1991

2. Activation of boron-dopant atoms in ion-implanted diamonds

3. The Stopping and Range of Ions in Solids;Ziegler,1985

4. Semiconducting diamond

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1. An Ultrathin, Smooth, and Low-Loss Al-Doped Ag Film and Its Application as a Transparent Electrode in Organic Photovoltaics;Advanced Materials;2014-06-18

2. Space charge limited current (SCLC) as observed on diamond surface damaged by MeV ion implantation;IOP Conference Series: Materials Science and Engineering;2010-11-01

3. Effect of prior C, Si and Sn implantation on the etch rate of CVD diamond;Diamond and Related Materials;2006-09

4. C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate;MRS Proceedings;2004

5. Ion implantation of diamond for electronic applications;Semiconductor Science and Technology;2003-02-10

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