Photoluminescence of piezoelectric strained InGaAsGaAs multi-quantum well p-i-n structures-Reference-Cited by-同舟云学术

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Photoluminescence of piezoelectric strained InGaAsGaAs multi-quantum well p-i-n structures

Published:1995-12 Issue:1-3 Volume:35 Page:42-46
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

David J.P.R.,Sale T.E.,Pabla A.S.,Rodríquez-Gironés P.J.,Woodhead J.,Grey R.,Rees G.J.,Robson P.N.,Skolnick M.S.,Hogg R.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure

2. Optical properties of strained layer (111)B Al0.15Ga0.85As-In0.04Ga0.96as quantum well heterostructures

3. Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices

4. Screening effects in (111)B AlGaAs‐InGaAs single quantum well heterostructures

5. Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of orientation dependence of piezoelectric effects in strained GaAs/InGaAs quantum well laser;Materials Science and Engineering: B;2021-11

2. Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A;Crystal Growth & Design;2021-02-12

3. On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2019-05

4. First- and second-order piezoelectricity in III-V semiconductors;Physical Review B;2011-11-28

5. Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on (111)B InP substrates;Applied Physics Letters;1997-11-17

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