Pairing of acceptors with interstitial donors in silicon and germanium-Reference-Cited by-同舟云学术

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Pairing of acceptors with interstitial donors in silicon and germanium

Published:1989-10 Issue:1-4 Volume:4 Page:25-29
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Deicher M.,Keller R.,Pfeiffer W.,Skudlik H.,Steiner D.,Recknagel E.,Wichert Th.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Hydrogen in crystalline semiconductors

2. Semiconductor Detectors;Coche,1968

3. Passivation of shallow acceptors by H in Si: A microscopic study by perturbed angular correlations

4. Perturbed Angular Correlation Spectroscopy of In-Li Pairs in Silicon

5. Thick junction radiation detectors made by ion drift

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3. Study of indium-defect interactions in diamond using two-dimensional conversion-electron emission channelling;Journal of Physics: Condensed Matter;1999-12-13

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