Aluminium-free 980 nm laser diodes
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference37 articles.
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1. Spatiotemporal emission dynamics of ridge waveguide laser diodes: picosecond pulsing and switching;Journal of the Optical Society of America B;1999-11-01
2. High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy;IEEE Journal of Quantum Electronics;1997
3. High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy;IEEE Photonics Technology Letters;1996-08
4. Differential gain of strained InGaAs/InGaAsP quantum‐well lasers lattice matched to GaAs;Journal of Applied Physics;1996-02-15
5. State-of-the-art aluminum-free 980-nm laser diodes;Journal of Lightwave Technology;1996
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