Mechanisms of layer growth during molecular beam epitaxy of semiconductor films-Reference-Cited by-同舟云学术

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Mechanisms of layer growth during molecular beam epitaxy of semiconductor films

Published:1995-03 Issue:2-3 Volume:30 Page:87-97
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Joyce B.A.,Shitara T.,Fahy M.R.,Sato K.,Neave J.H.,Fawcett P.N.,Kamiya I.,Zhang X.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. Dynamics of Crystal Growth

2. Interaction kinetics of As2 and Ga on {100} GaAs surfaces

3. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

4. The surface chemistry of the thermal cracking of silane on silicon (111)

5. Modulated molecular beam scattering of disilane on silicon

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A;Journal of Crystal Growth;2020-05

2. Epitaxy;Materials Science of Thin Films;2002

3. Fundamental growth processes in the molecular beam epitaxy of III–V compounds – an historical perspective;Thin Solid Films;2000-05

4. Nucleation and growth mechanisms during MBE of III–V compounds;Materials Science and Engineering: B;1999-12

5. Optimization of III/V binary growth with RHEED in MOMBE;Fresenius' Journal of Analytical Chemistry;1997-05-21

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