Composition and structure of epitaxial β-SiC films grown by reactive magnetron sputtering on Si(100) substrates
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates
3. Epitaxial growth of β-SiC single crystals by successive two-step CVD
4. Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films
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