RF performance of surface channel diamond FETs with sub-micron gate length

Author:

Aleksov A.,Denisenko A.,Spitzberg U.,Jenkins T.,Ebert W.,Kohn E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Optimum semi-conductors for high-power electronics;Shenai;IEEE Trans. Electron. Dev.,1989

2. Low-pressure synthetic diamond, Chapter 17, in: E. Kohn, W. Ebert, B. Dischler, C. Wild, (Eds.), Electronic Devices on CVD Diamond, Springer Series in Materials Processing, Springer-Verlag, ISBN 3-540-63619-6.

3. Hydrogen-terminated diamond surfaces and interfaces;Kawarada;Surf. Sci. Rep.,1996

4. Diamond surface-channel FET structure with 200-V breakdown voltage;Gluche;IEEE Electron. Dev. Lett.,1997

5. Pulse-doped diamond p-channel metal semiconductor field effect transistor;Shiomi;IEEE Electron. Dev. Lett.,1995

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