Direct measurement of band offsets in GaInP/AlGaInP using high pressure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference19 articles.
1. Quantum Well Lasers;Bour,1993
2. Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes
3. GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs
4. InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy
5. Direct determination of the band discontinuities inInxGa1−xP/InyAl1−yP multiple quantum wells
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1. Accurate determination of (AlxGa1x)0.5In0.5P alloy pressure coefficients;physica status solidi (b);2003-02
2. Conduction band offset in the AlxGayIn1−x−yP/Ga0.52In0.48P system as studied by luminescence spectroscopy;Journal of Applied Physics;2003-01
3. Band parameters for III–V compound semiconductors and their alloys;Journal of Applied Physics;2001-06
4. Chapter 4 Optical Properties of Semiconductors under Pressure;Semiconductors and Semimetals;1998
5. Chapter 1 High Pressure in Semiconductor Physics: A Historical Overview;Semiconductors and Semimetals;1998
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