Pressure as a probe of deep levels and defects in semiconductors: Antisites and oxygen centers in GaAs-Reference-Cited by-同舟云学术

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Pressure as a probe of deep levels and defects in semiconductors: Antisites and oxygen centers in GaAs

Published:1995-03 Issue:3-4 Volume:56 Page:625-629
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Samara G.A.,Skowronski M.,Mitchel W.C.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference16 articles.

1. Breathing-mode relaxation associated with electron emission and capture processes ofEL2 in GaAs

2. Pressure as a Probe of Deep Levels and Defects in Semiconductors: GaAs, GaP and Their Alloys

3. Proc. 5th International Conference on High Pressure in Semiconductor Physics,1993

4. Pressure dependence of deep levels in GaAs

5. Pressure dependence of deep electronic levels in semiconductors: The oxygen-vacancy pair (orAcenter) in silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microscopic structure of oxygen defects in gallium arsenide;Physical Review B;1999-12-15

2. gallium arsenide (GaAs), intrinsic or unidentified deep defect states;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.

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