Author:
Pavan Kumar Reddy Vudumula,Kotamraju Siva
Funder
Department of Science and Technology
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Characterization, modeling, and application of 10-kV SiC MOSFET;Wang;IEEE Trans. Electron Devices,2008
2. M. Östling, R. Ghandi, C.M. Zetterling, SiC power devices-present status, applications and future perspective, in: Proceedings of the 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, San Diego, CA, 2011, pp. 10–15.
3. Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs;Lelis;IEEE Trans. Electron Devices,2015
4. Effect of band-edge interface traps and transition region mobility on transport in 4H-SiC MOSFETs;Potbhare;Mater. Sci. Forum,2010
5. Carbon cluster model for electronic states at SiC-SiO2 interfaces;Bassler;Diam. Relat. Mater.,1997
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