Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference41 articles.
1. Modification of GaAs Schottky diodes by thin organic interlayers
2. Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers
3. Experimental investigation and simulation of hybrid organic/inorganic Schottky diodes
4. Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms
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3. Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect;Journal of Inorganic and Organometallic Polymers and Materials;2023-02-06
4. Structural and Optical Properties of Arsenic-Oxide Microcrystals on Gaas Substrate for Photonic Applications;2023
5. Improvement of the electrical performance of Ag/MEH-PPV/SiNWs Schottky diode by the insertion of a thin layer of MEH-PPV polymer and study of the annealing effect;2022-12-15
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